Method for separating semiconductor components and semiconductor component

ABSTRACT

A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21). Further, each of the semiconductor components (20) comprises at least one of the semiconductor chips (22), and the expansion of the at least one break nucleus (23) in the vertical direction (z) is at least 1% of the expansion of the carrier (21) in the vertical direction (z). Furthermore, a semiconductor component (20) is specified.

A method for singulating semiconductor components and a semiconductorcomponent are specified.

It is an object of the present disclosure to specify a method forsingulating semiconductor components which can be operated efficiently.Another object is to specify a semiconductor component that can beoperated efficiently.

According to at least one embodiment of the method for singulatingsemiconductor components, the method comprises a method step in which acarrier is provided. The carrier can be, for example, a connectionboard, a circuit board, a printed circuit board or a wafer. The carriercan be a three-dimensional body and can have the shape of a cylinder, adisc or a cuboid, for example. The carrier may have a main extensionplane. For example, the main extension plane of the carrier may beparallel to a surface, such as a top surface, of the carrier. Thecarrier may comprise a semiconductor material. For example, the carriermay be formed with silicon, onto and/or into which electricallyconductive structures such as conductor paths and/or contact points areapplied and/or inserted.

According to at least one embodiment of the method for singulatingsemiconductor components, the method comprises a method step in which atleast two semiconductor chips are applied on the carrier. It is alsopossible that a plurality of semiconductor chips are applied on thecarrier. The semiconductor chips can be optoelectronic semiconductorchips. The semiconductor chips can be designed to emit electromagneticradiation, especially light, during operation. The semiconductor chipsare, for example, luminescent diode chips such as light-emitting diodechips or laser diode chips. The at least two semiconductor chips can beapplied directly or indirectly on the carrier at a top side of thecarrier and fixed there. In particular, the semiconductor chips can befixed to the carrier by soldering or sintering or grown onto the carrierand structured by means of epitaxy. If the semiconductor chips areindirectly applied to the top side of the carrier, there may be at leastone additional component between the carrier and the semiconductorchips. The semiconductor chips have a top side facing away from thecarrier.

Each of the semiconductor chips can have a p-doped region, an activeregion and an n-doped region. The active region can be designed to emitelectromagnetic radiation during operation of the semiconductorcomponent. The active region can be arranged between the p-doped regionand the n-doped region. The active region can be arranged on the p-dopedregion on the side facing away from the carrier. The n-doped region canbe arranged on the active region.

According to at least one embodiment of the method for singulatingsemiconductor components, the method comprises a method step in which atleast one break nucleus is etched at a side of the carrier facing thesemiconductor chips. The break nucleus can be etched, for example, atthe top side of the carrier or the semiconductor chips. This means thatthe break nucleus is etched at the side of the carrier where thesemiconductor chips are arranged. If the semiconductor chips cover thetop side of the carrier completely, the break nucleus can be etched fromthe top side of the semiconductor chips, through at least onesemiconductor chip, in the direction of the carrier. If thesemiconductor chips do not cover the top side of the carrier completely,the break nucleus can be etched at least in places at the top side ofthe carrier in the direction of a side facing away from the top side ofthe carrier. To form the break nucleus, material of the carrier or thesemiconductor chips can be removed by etching. The break nucleus canthus be a trench-like structure or a recess. The break nucleus may haveside walls which are transverse or perpendicular to the main extensionplane of the carrier.

The shape of the break nucleus can be created by photo technology, forexample. For this purpose a mask can be applied to the carrier or to thecarrier with the semiconductor chips. The shape of the break nucleus canbe defined by the mask. The shape of the break nucleus can be defined ina plane parallel to the main extension plane of the carrier.

According to at least one embodiment of the method for singulatingsemiconductor components, the method comprises a method step in which atleast two semiconductor components are singulated by breaking thecarrier along the at least one break nucleus. The carrier can be brokenalong a direction which is transverse to the main extension plane of thecarrier. It is also possible that the carrier is broken along a verticaldirection, the vertical direction being perpendicular to the mainextension plane of the carrier. That the carrier is singulated along theat least one break nucleus may mean that a separation plane along whichthe carrier is singulated runs through the break nucleus. The separationplane can run from the top side of the carrier to the bottom side of thecarrier facing away from the top side and through the break nucleus. Forexample, the separation plane can run along a main extension directionof the break nucleus.

The break nucleus can be used to determine the position at which thecarrier is singulated. It is also possible that by shaping the breaknucleus, the singulation of the carrier at the position of the breaknucleus is simplified compared to other positions. By etching the breaknucleus, it is thus possible to determine the separation plane alongwhich the semiconductor components can be singulated.

According to at least one embodiment of the method for singulatingsemiconductor components, the at least one break nucleus extends atleast in places in a vertical direction, the vertical direction beingperpendicular to a main extension plane of the carrier. The breaknucleus can, for example, be etched in a vertical direction from the topside of the carrier or the semiconductor chips. Thus, the break nucleuscan have an expansion in the vertical direction. In addition, the breaknucleus may have an expansion in directions other than the verticaldirection.

According to at least one embodiment of the method for singulatingsemiconductor components, the at least one break nucleus is arrangedbetween the two semiconductor chips in a lateral direction, the lateraldirection being parallel to the main extension plane of the carrier.This means, for example, that the break nucleus is arranged at the topside of the carrier between the two semiconductor chips. The breaknucleus can be arranged at a distance from the semiconductor chips. Itis also possible that the break nucleus is arranged at the top side ofthe semiconductor chips between the two semiconductor chips.

A plurality of semiconductor chips can be arranged on the carrier and aplurality of break nuclei can be etched. The break nucleus can in eachcase extend along the surface in a first lateral direction. In a secondlateral direction, which is perpendicular to the first lateraldirection, a break nucleus can be arranged between two semiconductorchips.

According to at least one embodiment of the method for singulatingsemiconductor components, each of the semiconductor components comprisesat least one of the semiconductor chips. By breaking the carrier alongthe break nucleus, individual semiconductor components can be produced.Each of the semiconductor components may be characterized by comprisingat least one semiconductor chip and part of the carrier. Preferably, thesemiconductor components have approximately the same size.

The semiconductor components may have break edges, which result fromsingulating the semiconductor components. The break edges may betransverse or perpendicular to the main extension plane of the carrier.Different regions of the semiconductor chips can be exposed at the breakedges. For example, the n-doped region and the p-doped region of eachsemiconductor chip may extend to at least one break edge of therespective semiconductor component. Thus, the p-doped region and then-doped region of the respective semiconductor chip can be exposed at atleast one break edge.

According to at least one embodiment of the method for singulatingsemiconductor components, the expansion of the at least one breaknucleus in the vertical direction is at least 1% of the expansion of thecarrier in the vertical direction. The expansion of the break nucleus inthe vertical direction is predetermined, for example, by the depth ofthe etched trench-like structure. The expansion of the carrier in thevertical direction is predetermined by the thickness of the carrier inthe vertical direction, for example. The expansion of the break nucleusin the vertical direction can be at most 100% of the expansion of thecarrier with the semiconductor chips in the vertical direction.

The method for singulating semiconductor components described here isbased, inter alia, on the idea that by introducing the break nucleus,the singulation of the semiconductor components is simplified. The breaknucleus or nuclei can define the position or a direction along which thesemiconductor components are singulated. The break nucleus or nucleithus define the position at which the semiconductor components aresingulated. Thus, the semiconductor components can have a predefinablesize.

Furthermore, the method for singulating semiconductor components issimplified, since no chemical cleaning and no removal of materialresidues is required after etching the break nuclei. Since the breaknucleus or break nuclei are produced by etching, no or only few materialresidues remain in the area of the side walls of the break nuclei. Thismeans that even in the area of the break edges of the semiconductorcomponents, no or only few material residues remain. It is advantageousto avoid material residues in the area of the break edges of thesemiconductor components, as these can lead to short circuits or leakagecurrents within the semiconductor component. If, for example, thep-doped region and the n-doped region are exposed at the break edges ofthe semiconductor components, it is advantageous to avoid materialresidues, as these can cause leakage currents or short circuits in thearea of the break edges during operation of the semiconductorcomponents.

Furthermore, the method described here allows for efficient singulationof semiconductor components. The break nuclei can already be etched whenthe semiconductor chips are still present in a composite on the carrier.Subsequently, a plurality of semiconductor components can be singulatedsimultaneously along the break nuclei.

In addition, the method described here can be used to produce asemiconductor component which can be operated efficiently. The activeregion of the semiconductor chip can be arranged on the side of thep-doped region facing away from the carrier, and the n-doped region canbe arranged on the active region. Due to the avoidance of materialresidues, leakage currents and short circuits in the semiconductorcomponent are avoided for this design. Furthermore, this design allowsfor improved heat dissipation, for example via a solder materialarranged between the p-doped region and the carrier. Thus, componentstability and lifetime can be improved and the semiconductor componentcan be operated at high power levels.

According to at least one embodiment of the method for singulatingsemiconductor components, the method comprises method steps in which acarrier is provided, at least two semiconductor chips are applied on thecarrier, at least one break nucleus is etched at a side of the carrierfacing the semiconductor chips, and at least two semiconductorcomponents are singulated by breaking the carrier along the at least onebreak nucleus, wherein the at least one break nucleus extends at leastin places in a vertical direction, the vertical direction beingperpendicular to a main extension plane of the carrier, the at least onebreak nucleus is arranged between the two semiconductor chips in alateral direction, the lateral direction being parallel to the mainextension plane of the carrier, each of the semiconductor componentscomprises at least one of the semiconductor chips, and the expansion ofthe at least one break nucleus in the vertical direction is at least 1%of the expansion of the carrier in the vertical direction.

Furthermore, a semiconductor component is specified. The semiconductorcomponent can preferably be produced using a method described here. Inother words, all features disclosed for the method for singulatingsemiconductor components are also disclosed for the semiconductorcomponent and vice versa.

According to at least one embodiment of the semiconductor component, thesemiconductor component comprises a component carrier. The componentcarrier may be a part of a carrier. The carrier can be, for example, aconnection board, a circuit board, a printed circuit board or a wafer.The component carrier can be formed by singulating the semiconductorcomponent. A carrier can be singulated into a plurality of componentcarriers, each semiconductor component comprising one component carrier.The component carrier has a main extension plane.

According to at least one embodiment of the semiconductor component, thesemiconductor component comprises a semiconductor chip which is arrangedon the component carrier.

According to at least one embodiment of the semiconductor component, thecomponent carrier has break edges which are transverse to a mainextension plane of the component carrier. The break edges may includethe side surfaces of the component carrier which are transverse orperpendicular to the main extension plane of the component carrier. Thebreak edges can additionally include the side surfaces of thesemiconductor chip which are transverse or perpendicular to the mainextension plane of the component carrier. The break edges can be createdby singulating the semiconductor component along the break edges. It isalso possible that the break edges are perpendicular to the mainextension plane of the component carrier. The break edges of thecomponent carrier may be any outer surfaces of the component carrierwhich are perpendicular to the main extension plane of the componentcarrier. The break edges can extend further along all outer surfaces ofthe semiconductor chip which are perpendicular to the main extensionplane of the component carrier. The break edges may show traces of thesingulation process at least in places.

According to at least one embodiment of the semiconductor component, atleast one of the break edges has a notch at least in places, so that alateral expansion of the semiconductor component in a lateral directionon a top side of the semiconductor component facing away from thecomponent carrier is smaller at least in places than a lateral expansionof the semiconductor component in the lateral direction in the area ofthe component carrier, the lateral direction being parallel to the mainextension plane of the component carrier. For example, the notch can bean area where material of the component carrier or semiconductor chiphas been removed. The notch can be a recess, for example. The notch canbe arranged on one side of the semiconductor component. It is alsopossible that the notch is arranged on several sides of thesemiconductor component or that the semiconductor component has severalnotches.

In the area of the notch, the lateral expansion of the semiconductorcomponent in a lateral direction on the top side of the semiconductorcomponent is smaller than the lateral expansion of the semiconductorcomponent in the area of the component carrier where the notch is notarranged. This means that the lateral expansion of the semiconductorcomponent in a lateral direction is reduced at least in places due tothe notch.

According to at least one embodiment of the semiconductor component, thebreak edge shows traces of an etching process in the area of the notch.The break edge may show traces of an etching process in the entire areaof the notch. The notch can be formed by an etching process. This is anobjective feature that can be detected on the finished semiconductorcomponent, for example by microscopic examination.

According to at least one embodiment of the semiconductor component, theexpansion of the notch in the vertical direction is at least 1% of theexpansion of the component carrier in the vertical direction, thevertical direction being perpendicular to the main extension plane ofthe component carrier. The notch thus extends over at least part of thevertical expansion of the semiconductor component. This means that thelateral expansion of the semiconductor component in a lateral directionis reduced at the vertical positions where the notch is arranged. At thevertical positions where the notch is not arranged, the lateralexpansion of the semiconductor component in the lateral direction is notreduced.

The semiconductor component described here is based, inter alia, on theidea that leakage currents and short circuits in the semiconductorcomponent are avoided. The notch shows traces of an etching process andcan be formed by an etching process. This means that no or only fewmaterial residues remain at the break edge. Since the p-doped region andthe n-doped region of the semiconductor chip can be exposed in the areaof the break edge or in the area of the notch, material residues in thisarea can lead to leakage currents or short circuits. Thus, by avoidingmaterial residues in these areas, leakage currents and short circuits inthe semiconductor component are avoided and the semiconductor componentcan be operated more efficiently.

Between the p-doped region of the semiconductor chip and the componentcarrier a material can be arranged, for example a solder material,through which heat generated in the semiconductor chip during operationcan be dissipated. Therefore, the semiconductor component can beoperated advantageously at high power levels and the component stabilityand lifetime are increased.

According to at least one embodiment of the semiconductor component, thesemiconductor component comprises a component carrier and asemiconductor chip which is arranged on the component carrier, whereinthe component carrier has break edges which extend transversely to amain extension plane of the component carrier, at least one of the breakedges has a notch at least in places, so that a lateral expansion of thesemiconductor component in a lateral direction on a top side of thesemiconductor component facing away from the component carrier issmaller at least in places than a lateral expansion of the semiconductorcomponent in the lateral direction in the area of the component carrier,the lateral direction being parallel to the main extension plane of thecomponent carrier, the break edge shows traces of an etching process inthe area of the notch, and the expansion of the notch in the verticaldirection is at least 1% of the expansion of the component carrier inthe vertical direction, the vertical direction being perpendicular tothe main extension plane of the component carrier.

The following embodiments can refer to both the method described hereand the semiconductor component described here.

According to at least one embodiment of the method or the semiconductorcomponent, the expansion of the at least one break nucleus or notch inthe vertical direction is at least 5% and at most 40% of the expansionof the carrier or component carrier in the vertical direction. For thisrange of the expansion of the break nucleus in the vertical direction,singulation of the semiconductor components along the break nucleus issimplified. For these values, the break can be guided along the breaknucleus to singulate the semiconductor components. Thus the size of thesemiconductor components can be determined by the arrangement of thebreak nuclei. The semiconductor component advantageously has the notchwith an expansion in the vertical direction of at least 5% and at most40%, since the semiconductor component thus has a predefinable size andcan be singulated in a simplified manner.

According to at least one embodiment of the method or the semiconductorcomponent, the break nucleus is generated by plasma etching. A mask canbe used to define the shape of the break nucleus. When the break nucleusis generated by plasma etching, advantageously no or only few materialresidues remain in the area of the break nucleus.

According to at least one embodiment of the method or the semiconductorcomponent, the semiconductor components are semiconductor lasers. Forexample, the semiconductor component may be a ridge waveguide laser.

According to at least one embodiment of the method or the semiconductorcomponent, the expansion of the break nucleus or notch in a lateraldirection is smaller than the expansion of a semiconductor chip in thelateral direction. This can mean that in at least one lateral directionthe break nucleus or notch do not extend over the entire lateralexpansion of the semiconductor chip. In at least one lateral direction,the semiconductor chip therefore has a greater expansion than the breaknucleus or notch. It is also possible that the expansion of the breaknucleus or notch in a lateral direction is smaller than the expansion ofa semiconductor component in the lateral direction. To define the sizeof the semiconductor components by the break nucleus, it is sufficientif the expansion of the break nucleus or notch in a lateral direction issmaller than the expansion of a semiconductor chip in the lateraldirection.

According to at least one embodiment of the method or the semiconductorcomponent, the expansion of the break nucleus or notch in a lateraldirection is greater than the expansion of a semiconductor chip in thelateral direction. The break nucleus can extend in a lateral directionover the expansion of more than one semiconductor chip. If a pluralityof semiconductor chips is arranged on the carrier, the break nucleus canextend in a lateral direction over the expansion of a plurality ofsemiconductor chips. This means that in total a lower number of breaknuclei is required for singulating the semiconductor components.Furthermore, it is possible that the notch extends over the entireexpansion of the semiconductor component in a lateral direction. In thecase that the semiconductor chip of the semiconductor component has asmaller expansion in a lateral direction than the component carrier, theexpansion of the notch in this lateral direction can be greater than theexpansion of the semiconductor chip in this lateral direction. The notchcan thus extend evenly along at least one of the side surfaces of thesemiconductor component.

According to at least one embodiment of the method or the semiconductorcomponent, in a plane parallel to the main extension plane of thecarrier or the component carrier, a main extension direction of thebreak nucleus or the notch is perpendicular to a crystal direction ofthe carrier or the component carrier. For example, a plane parallel tothe main extension plane of the carrier or component carrier may be thetop side of the semiconductor chip or the top side of the carrier orcomponent carrier. The break nucleus or notch may have a main extensiondirection in a first lateral direction. This first lateral direction canbe parallel to the main extension plane of the carrier or componentcarrier. The carrier may comprise a material that has a crystalstructure. For example, the carrier may comprise a semiconductormaterial. One of the crystal directions of the carrier can be parallelto a second lateral direction. The second lateral direction can beperpendicular to the first lateral direction and parallel to the mainextension plane of the carrier. Advantageously, the carrier can thus bebroken along a crystal direction of the carrier and along the mainextension direction of the break nucleus for singulating a semiconductorcomponent.

According to at least one embodiment of the method or the semiconductorcomponent, prior to breaking the carrier along the at least one breaknucleus, the carrier is broken along a crystal direction. The breakedge, which results from breaking the carrier along the crystaldirection, can be transverse or perpendicular to the main extensionplane of the carrier. To singulate the semiconductor components, thecarrier can be broken along a crystal direction between two respectivesemiconductor chips. For singulating a semiconductor component, thecarrier as a whole can be singulated along at least two separationplanes, the two separation planes being perpendicular to each other. Afirst separation plane can be given by a crystal direction of thecarrier. The first separation plane can be the plane along which thecarrier is broken along a crystal direction. The second separation planecan be the plane along which the carrier is broken along the breaknucleus.

If a plurality of semiconductor chips is arranged on the carrier, thecarrier can be broken in a first step between two respectivesemiconductor chips along a crystal direction.

The carrier is singulated into sections on which a plurality ofsemiconductor chips is arranged in one direction. For each of thesesections a break nucleus is arranged between two respectivesemiconductor chips. For complete singulation of the semiconductorcomponents, the carrier can be broken along the break nuclei. In thisway, the semiconductor components can be singulated efficiently.

According to at least one embodiment of the method or the semiconductorcomponent, the shape of the break nucleus is asymmetrical. The breaknucleus may have a cross-section in a plane parallel to the mainextension plane of the carrier. This cross-section may have anasymmetrical shape. This can mean that the cross-section does not havean axis of symmetry. This can also mean that the cross-section along themain extension direction of the break nucleus does not have an axis ofsymmetry. For example, two opposite side walls of the break nucleus mayhave different shapes. The shape of the cross-section of the breaknucleus can be created by photo technology, for example.

The break nucleus may also have a bottom surface which adjoins the sidewalls of the break nucleus. The bottom surface may be parallel to themain extension plane of the carrier.

The break nucleus preferably has a main extension direction which isparallel to the main extension plane of the carrier. The semiconductorcomponents can be singulated along the main extension direction of thebreak nuclei. The break nucleus may have two opposite side walls alongits main direction of expansion. By introducing an asymmetry into thecross-section of the break nucleus, it can be predefined along which ofthe two opposite side walls the carrier is broken during singulation. Incase the two opposite side walls have the same shape, the carrier can bebroken along one of the respective side walls during singulation. Thismeans that some semiconductor components are singulated along one of theside walls and others of the semiconductor components are singulatedalong the other side wall. Therefore, the singulated semiconductorcomponents can have different lateral expansions, which can beundesirable. An asymmetry in the cross-section of the break nucleus canlead to the carrier being broken along a preferred side wall. Thus, itis possible to break the carrier for each of the semiconductorcomponents along the preferred side wall. In this case, the singulatedsemiconductor components have the same lateral expansion.

According to at least one embodiment of the method or the semiconductorcomponent, the break nucleus has the shape of a trench. The trench canbe formed in a semiconductor chip and/or the carrier by etching. Thetrench can be formed from the top side of the semiconductor chipstowards the carrier. The trench can extend at least in places throughthe carrier. By introducing the break nucleus, it is possible to definethe position at which the semiconductor components are singulated. Inaddition, the introduction of the break nucleus simplifies thesingulation process.

According to at least one embodiment of the method or semiconductorcomponent, the trench has side walls, at least two opposite side wallshaving a different shape. The side walls may be transverse orperpendicular to the main extension plane of the carrier. At least twoof the side walls may extend along the main extension direction of thetrench. These two side walls can be opposite each other. Since the twoopposite side walls have different shapes, the break nucleus has anasymmetrical shape. The two opposite side walls can therefore be shapedso that one of the side walls is the preferred side wall for singulatingthe semiconductor components. Advantageously, the semiconductorcomponents are singulated along the same side wall of the trench. Thus,all semiconductor components can have the same size in the lateraldirection.

According to at least one embodiment of the method or the semiconductorcomponent, the expansion of the break nucleus or notch is not constantin the vertical direction. The expansion of the break nucleus in thevertical direction can be the depth of the break nucleus or the trenchin the vertical direction. This can mean that not the entire bottomsurface of the break nucleus is parallel to the main extension plane ofthe carrier. It is possible that the bottom surface encloses an anglegreater than 0° with the main extension plane of the carrier. It is alsopossible that the break nucleus has at least two bottom surfaces,wherein the bottom surfaces are arranged at different vertical positionsof the break nucleus. This means that the depth of the break nucleus isnot constant in the vertical direction.

The notch may have a bottom surface that adjoins a side wall of thenotch. The distance from the bottom surface to the top side of thesemiconductor chip is not necessarily constant. As described for thebreak nucleus, the bottom surface of the notch may also run parallel tothe main extension plane of the component carrier at least in places orenclose an angle greater than 0° with the main extension plane of thecomponent carrier at least in places. The notch can also have at leasttwo bottom surfaces, which are arranged at different vertical positionsof the notch.

If the expansion of the break nucleus or notch is not constant in thevertical direction, a preferred position within the break nucleus can bedefined along which the carrier is broken. In this way too it can beachieved that the singulated semiconductor components all have the sameexpansion in the lateral direction.

According to at least one embodiment of the method or the semiconductorcomponent, a passivation layer is applied on the break nucleus at leastin places. The passivation layer can be applied to protect thesemiconductor chip. Thus the semiconductor chip can be protected by thepassivation layer during singulation. Another possibility is that thepassivation layer is applied on the break nucleus only in places. Theareas which are not covered by the passivation layer can be chemicallyroughened, for example by means of KOH. The passivation layer can thenbe removed again. The break nucleus then has a chemically roughened areaand an area which is not chemically roughened. In this way, a preferredposition can be defined along which the carrier is broken. For example,the carrier can be broken on the side of the break nucleus which is notchemically roughened. By predefining a preferred position along whichthe carrier is broken, it can be ensured that all singulatedsemiconductor components have the same size in the lateral direction.For further processing of the semiconductor components it can beadvantageous if all semiconductor components have the same size in thelateral direction.

In the following, the method for singulating semiconductor componentsdescribed here and the semiconductor component described here areexplained in more detail in connection with exemplary embodiments andtheir corresponding figures.

FIGS. 1A and 1B show schematic cross-sections through a semiconductorcomponent according to two exemplary embodiments.

FIGS. 2A, 2B, 2C and 2D describe exemplary embodiments of the method forsingulating semiconductor components by means of top views on a carrierwith a plurality of semiconductor chips.

FIGS. 3A, 3B, 3C, 3D, 3E, 3F, 3G, 4A, 4B, 4C, 4D, 4E, 4F, 4G and 4H showa cross-section through a symmetrical break nucleus according to variousexemplary embodiments.

FIGS. 5A, 5B, 5C, 6A, 6B, 6C and 6D show a cross-section through a breaknucleus with an asymmetrical shape according to various exemplaryembodiments.

FIGS. 7A, 7B, 7C, 7D, 7E and 7F show a cross-section through a breaknucleus according to further exemplary embodiments.

Equal or similar elements as well as elements of equal function aredesignated with the same reference signs in the figures. The figures andthe mutual proportions of the elements depicted in the figures are notto be regarded as true to scale. Rather, individual elements may beoversized for better representability and/or comprehensibility.

FIG. 1A shows a schematic cross-section through a semiconductorcomponent 20 according to an exemplary embodiment. The semiconductorcomponent 20 comprises a component carrier 33 and a semiconductor chip22. The semiconductor chip 22 is arranged on the component carrier 33.The semiconductor chip 22 can be a semiconductor laser, for example. Inthis case the semiconductor chip 22 is a ridge waveguide laser. A lasermode 30 is generated below a strip 31 as shown schematically.

The component carrier 33 has break edges 24 which are perpendicular tothe main extension plane of the component carrier 33. The break edges 24also extend along the semiconductor chip 22. One of the break edges 24has a notch 25. The notch 25 is arranged next to the strip 31 of thesemiconductor laser in a lateral direction x, the lateral direction xbeing parallel to the main extension plane of the component carrier 33.The notch 25 is a recess or trench in the semiconductor chip 22, whichcan be formed by an etching process. Therefore the break edge 24 showstraces of an etching process in the area of the notch 25. The notch 25has a side wall 26 and a bottom surface 29. A lateral expansion of thesemiconductor component 20 in the lateral direction x at a top side 28of the semiconductor component 20 facing away from the component carrier33 is smaller in the area of the notch 25 than the lateral expansion ofthe semiconductor component 20 in the lateral direction x in the area ofthe component carrier 33 near the side of the component carrier 33facing away from the semiconductor chip 22.

The expansion of the notch 25 in a vertical direction z, which isperpendicular to the main extension plane of the component carrier 33,is at least 1% of the expansion of the component carrier 33 in thevertical direction z. Preferably, the expansion of the notch 25 in thevertical direction z is at least 5% and at most 40% of the expansion ofthe component carrier 33 in the vertical direction z. In other exemplaryembodiments, the notch 25 can also extend in the area of the componentcarrier 33 and not only in the area of the semiconductor chip 22.

FIG. 1B shows a cross-section through another exemplary embodiment of asemiconductor component 20. In this exemplary embodiment, the notch 25is arranged on the other side of the strip 31 than shown in FIG. 1A. Thenotch 25 is not shown in FIG. 1B. Compared to the exemplary embodimentin FIG. 1A, the semiconductor component 20 in FIG. 1B was singulatedalong the side wall 26 of the notch 25. The semiconductor component 20shown in FIG. 1A was singulated along a different position within thenotch 25 than the semiconductor component 20 shown in FIG. 1B.

By means of the top view on a carrier 21 with a plurality ofsemiconductor chips 22 shown in FIG. 2A, an exemplary embodiment of themethod for singulating semiconductor components 20 is described. Aplurality of semiconductor chips 22 is arranged on the carrier 21 on atop side 28 of the carrier 21. The semiconductor chips 22 are arrangedat nodes of a regular grid. At a side of the carrier 21 facing thesemiconductor chips 22, break nuclei 23 are etched in each case betweentwo semiconductor chips 22. The break nuclei 23 can be created by plasmaetching, for example. The break nuclei 23 are arranged in each casebetween two semiconductor chips 22 in the lateral direction x and extendin the vertical direction z. The expansion of the break nuclei 23 in thevertical direction z is at least 1% of the expansion of the carrier 21in the vertical direction z. Preferably, the expansion of the breaknuclei 23 in the vertical direction z is at least 5% and at most 40% ofthe expansion of the carrier 21 in the vertical direction z.

The break nuclei 23 are arranged spaced apart from each other along astraight line in a first lateral direction x. The break nuclei 23 have amain extension direction which is parallel to the first lateraldirection x. In this exemplary embodiment the break nuclei 23 also havean axis of symmetry which is parallel to the first lateral direction x.The distance between two respective break nuclei 23 in the first lateraldirection x may be at least 10 μm and at most 50 μm. Preferably, thedistance between two respective break nuclei 23 in the first lateraldirection x is at least 25 μm and at most 30 μm. The expansion of thebreak nuclei 23 in the first lateral direction x is smaller than theexpansion of a semiconductor chip 22 in the first lateral direction x.

In a second lateral direction y, one semiconductor chip 22 is arrangedin each case between two break nuclei 23. The second lateral direction yis perpendicular to the first lateral direction x and the verticaldirection z. As an example, only five break nuclei 23 are shown in FIG.2A. On the carrier 21, however, further break nuclei 23 and furthersemiconductor chips 22 can be arranged in both lateral directions x, y.

The angle between two side walls 26 of a break nucleus 23 as shown inFIG. 2A may be at least 90° and at most 179°. Preferably, the shownangle is greater than 130°. The expansion of each break nucleus 23 inthe second lateral direction y may be at least 1 μm and at most 50 μm.

Preferably, the expansion of each break nucleus 23 in the second lateraldirection y is at most 10 μm.

The carrier 21 comprises a material with a crystal structure. One of thecrystal directions of the carrier 21 is parallel to the second lateraldirection y. This means that the main extension direction of the breaknucleus 23 is perpendicular to a crystal direction of the carrier 21.

In a next method step, the carrier 21 is broken along a crystaldirection. The carrier 21 is broken along the crystal direction which isparallel to the second lateral direction y. The carrier 21 is broken ineach case between two semiconductor components 20 along the crystaldirection. This creates sections on which a plurality of semiconductorchips 22 are arranged side by side along the second lateral direction y.

In a next method step, the semiconductor components 20 are singulated bybreaking the carrier 21 along the break nucleus 23, which is arrangedbetween the respective two semiconductor chips 22 of the semiconductorcomponents 20. Thus, each of the sections is singulated into individualsemiconductor components 20 by breaking the carrier 21 along each of thebreak nuclei 23. Each of the singulated semiconductor components 20comprises at least one semiconductor chip 22.

FIG. 2B describes a further exemplary embodiment of the method forsingulating semiconductor components 20. The structure in FIG. 2Bcorresponds to the structure in FIG. 2A. FIG. 2B shows two possibilitiesfor the arrangement of the break nuclei 23 in a top view on the carrier21 with the semiconductor chips 22. Like in FIG. 2A, the break nuclei 23are spaced apart from each other. The break nuclei 23 can have across-section in the shape of a circle in the top view. Furthermore, itis possible that the break nuclei 23 have a cross-section in the topview as shown in FIG. 2A.

FIG. 2C describes a further exemplary embodiment of the method forsingulating semiconductor components 20. The structure in FIG. 2Ccorresponds to the structure in FIG. 2A. In addition to the break nuclei23 described in FIG. 2A, further break nuclei 32 are etched. The furtherbreak nuclei 32 extend over the entire expansion of the carrier 21 inthe first lateral direction x. Thus, the expansion of the further breaknuclei 32 in the first lateral direction x is greater than the expansionof a semiconductor chip 22 in the first lateral direction x. The furtherbreak nuclei 32 have a smaller expansion in the vertical direction zthan the break nuclei 23. The expansion of the further break nuclei 32in the second lateral direction y is equal to the expansion of the breaknuclei 23 in the second lateral direction y. However, it is alsopossible that the expansion of the further break nuclei 32 in the secondlateral direction y is smaller or greater than the expansion of thebreak nuclei 23 in the second lateral direction y. Furthermore, thebreak nuclei 23 may have a different shape than shown in FIG. 2C. Thefurther break nuclei 32 can further simplify the singulation of thesemiconductor components 20.

FIG. 2D describes a further exemplary embodiment of the method forsingulating semiconductor components 20. The structure in FIG. 2Dcorresponds to the structure in FIG. 2A. According to this exemplaryembodiment, a passivation layer 27, which extends along the firstlateral direction x, is applied in places on the break nuclei 23. Theareas of the break nuclei 23 which are not covered by the passivationlayer 27 are chemically roughened, for example by means of KOH.Afterwards the passivation layer 27 is removed again. The break nuclei23 now have a chemically roughened area and an area which was covered bythe passivation layer 27 and is not roughened. In this way, a preferredposition can be defined along which the carrier 21 is broken.Preferably, the carrier 21 is broken on the side of the break nucleus 23which is not roughened. By predefining a preferred position along whichthe carrier 21 is broken, it can be ensured that all singulatedsemiconductor components 20 have the same size in the lateral directionx.

FIGS. 3A, 3B, 3C, 3D, 3E, 3F and 3G show a cross-section from the topview through a symmetrical break nucleus 23 according to variousexemplary embodiments. Symmetrical in this case means that the breaknuclei 23 have an axis of symmetry which is parallel to the firstlateral direction x.

In FIG. 3A, the cross-section of the break nucleus 23 has the shape of arectangle with beveled sides.

In FIG. 3B the cross-section of the break nucleus 23 has the shape of arectangle.

In FIG. 3C, the cross-section of the break nucleus 23 has the shape of arectangle with rounded sides.

In FIG. 3D, the cross-section of the break nucleus 23 has the shape of arectangle with rounded corners.

In FIG. 3E, the cross-section of break nucleus 23 has the shape of anellipse.

In FIG. 3F the cross-section of the break nucleus 23 is formed by twosegments of a circle.

In FIG. 3G, the cross-section of the break nucleus 23 has the shape of arectangle, one side of the rectangle being beveled and the opposite sideof the rectangle being rounded.

FIGS. 4A, 4B, 4C, 4D, 4E, 4F, 4G and 4H show a cross-section from thetop view through a part of a symmetrical break nucleus 23 according tovarious exemplary embodiments. The break nuclei 23 shown thus havesimilar shapes to those shown with FIGS. 3A, 3B, 3C, 3D, 3E, 3F and 3G.

FIGS. 5A, 5B, 5C, 6A, 6B, 6C and 6D show a cross-section through a breaknucleus 23 with an asymmetrical shape according to various exemplaryembodiments. Asymmetrical in this case means that the break nuclei 23have no axis of symmetry along the first lateral direction x.

In FIGS. 5A, 5B and 5C, the break nucleus 23 has a rectilinear side wall26 along the first lateral direction x and an opposite irregular orroughened side wall 26. This can mean that the break nuclei 23 shownhave a first side wall 26 that spans a plane perpendicular to the mainextension plane of the carrier 21. In addition, the break nuclei 23shown have a second side wall 26, which is opposite the first side wall26 and has an irregular structure. The irregular structure of the secondside wall 26 can be produced by chemical roughening, for example.

FIGS. 6A, 6B, 6C and 6D show further exemplary embodiments of the breaknucleus 23 with an asymmetrical shape.

By introducing an asymmetry in the cross-section of the break nucleus23, it can be defined along which of the two opposite side walls 26 thecarrier 21 is broken during singulation. An asymmetry in thecross-section of the break nucleus 23 can lead to the carrier 21 beingbroken along a preferred side wall 26. Thus it is possible to break thecarrier 21 for each of the semiconductor components 20 along thepreferred sidewall 26. In this case the singulated semiconductorcomponents 20 have the same lateral expansion.

FIGS. 7A, 7B, 7C, 7D, 7E and 7F show a cross-section through a breaknucleus 23 according to further exemplary embodiments, in which theexpansion of the break nucleus 23 in the vertical direction z is notconstant. The break nuclei 23 are shown as cross-sections along a planeperpendicular to the main extension plane of the carrier 21. Thus, theextension of the break nuclei 23 in the vertical direction z is shown.

In FIG. 7A, the break nucleus 23 has a bottom surface 29 which is notparallel to the main extension plane of the carrier 21. The side walls26 of the break nucleus 23 are perpendicular to the main extension planeof the carrier 21.

In FIG. 7B, the break nucleus 23 has a bottom surface 29 which is notparallel to the main extension plane of the carrier 21. The side walls26 enclose an angle with the vertical direction z of greater than 0°.

In FIG. 7C, the break nucleus 23 has two bottom surfaces 29, which arelocated at different vertical positions. Thus, the trench has a greaterdepth in the area of one of the bottom surfaces 29 than in the area ofthe other bottom surface 29. Thus, it is possible to define a preferredside along which the carrier 21 is broken to singulate the semiconductorcomponents 20.

In FIGS. 7D and 7E, the break nucleus 23 has three bottom surfaces 29.Again, the trench has a greater depth in the area of one of the bottomsurfaces 29 than in the areas of the other bottom surfaces 29.

In FIG. 7F, the break nucleus 23 has a bottom surface 29 which is notparallel to the main extension plane of the carrier 21. One of the sidewalls 26 runs parallel to the vertical direction z and another one ofthe side walls 26 runs at an angle greater than 0° to the verticaldirection z.

The invention is not limited to the exemplary embodiments by thedescription based on the same. Rather, the invention comprises any newfeature as well as any combination of features, which includes inparticular any combination of features in the claims, even if thisfeature or combination itself is not explicitly stated in the claims orexemplary embodiments.

The present patent application claims the priority of German patentapplication DE 10 2018 100 763.9, the disclosure content of which ishereby included by way of reference.

LIST OF REFERENCE SIGNS

-   20: semiconductor component-   21: carrier-   22: semiconductor chip-   23: break nucleus-   24: break edge-   25: notch-   26: side wall-   27: passivation layer-   28: top side-   29: bottom surface-   30: laser mode-   31: strip-   32: further break nucleus-   33: component carrier-   x: lateral direction-   z: vertical direction

1. A method for singulating semiconductor components, comprising thesteps of: providing a carrier, applying at least two semiconductor chipson the carrier, etching at least one break nucleus at a side of thecarrier facing the semiconductor chips, and singulating at least twosemiconductor components by breaking the carrier along the at least onebreak nucleus, wherein the at least one break nucleus extends at leastin places in a vertical direction (z), the vertical direction (z) beingperpendicular to a main extension plane of the carrier, the at least onebreak nucleus is arranged between the two semiconductor chips in alateral direction (x), the lateral direction (x) being parallel to themain extension plane of the carrier, each of the semiconductorcomponents comprises at least one of the semiconductor chips, and theexpansion of the at least one break nucleus in the vertical direction(z) is at least 1% of the expansion of the carrier in the verticaldirection (z).
 2. The method according to claim 1, wherein: break edgesare produced by the singulating, and at least one of the break edges hasa notch at least in places, the break edge shows traces of the etchingin the area of the notch.
 3. The method according to claim 2, whereinthe expansion of the at least one break nucleus or notch in the verticaldirection (z) is at least 5% and at most 40% of the expansion of thecarrier in the vertical direction (z).
 4. The method according to claim1, wherein the break nucleus is generated by plasma etching.
 5. Themethod according to claim 1, wherein the semiconductor components aresemiconductor lasers.
 6. The method according to claim 2, wherein theexpansion of the break nucleus or notch in a lateral direction (x) issmaller than the expansion of one of the at least two semiconductorchips in the lateral direction (x).
 7. The method according to claim 2,wherein the expansion of the break nucleus or notch in a lateraldirection (x) is greater than the expansion of one of the at least twosemiconductor chips in the lateral direction (x).
 8. The methodaccording to claim 2, wherein in a plane parallel to the main extensionplane of the carrier, a main extension direction of the break nucleus orthe notch is perpendicular to a crystal direction of the carrier.
 9. Themethod according to claim 1, wherein prior to breaking the carrier alongthe at least one break nucleus, the carrier is broken along a crystaldirection.
 10. The method according to claim 1, wherein the a shape ofthe break nucleus is asymmetrical.
 11. The method according to claim 1,wherein the break nucleus has the a shape of a trench.
 12. The methodaccording to claim 11, wherein the trench has side walls, at least twoopposite side walls having a different shape.
 13. The method accordingto claim 2, wherein the expansion of the break nucleus or notch is notconstant in the vertical direction (z).
 14. The method according toclaim 2, wherein a passivation layer is applied at least in places onthe break nucleus.
 15. (canceled)
 16. A semiconductor componentcomprising: a component carrier, and a semiconductor chip which isarranged on the component carrier, wherein the component carrier hasbreak edges which extend transversely to a main extension plane of thecomponent carrier, at least one of the break edges has a notch at leastin places, so that a lateral expansion of the semiconductor component ina lateral direction (x) on a top side of the semiconductor componentfacing away from the component carrier is smaller at least in placesthan a lateral expansion of the semiconductor component in the lateraldirection (x) in the area of the component carrier, the lateraldirection (x) being parallel to the main extension plane of thecomponent carrier, the break edge shows only in places traces of anetching process in an area of the notch, and the expansion of the notchin the vertical direction (z) is at least 1% of the expansion of thecomponent carrier in the vertical direction (z), the vertical direction(z) being perpendicular to the main extension plane of the componentcarrier.
 17. The semiconductor component according to claim 16, whereinthe expansion of the at least one notch in the vertical direction (z) isat least 5% and at most 40% of the expansion of the component carrier inthe vertical direction (z).
 18. The semiconductor component according toclaim 16, wherein the semiconductor components are semiconductor lasers.19. The semiconductor component according to claim 16, wherein theexpansion of the notch in a lateral direction (x) is smaller than theexpansion of a semiconductor chip in the lateral direction (x).
 20. Thesemiconductor component according to claim 16, wherein the expansion ofthe notch in a lateral direction (x) is greater than the expansion of asemiconductor chip in the lateral direction (x).